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DonanımHaber Tüm30 August 2026

GaN teknolojisinde büyük atılım: 4.000 Volt'a dayanan transistör geliştirildi

İsviçre’deki araştırmacılar, galyum nitrat (GaN) tabanlı güç elektroniğinde önemli bir sınırı aşmayı başardı. Geliştirilen yeni transistör, 4 kV gerilime dayanırken düşük elektrik direncini koruyor.

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